GNP1070TC-Z
EcoGaN™, 650V 20A DFN8080K, E-mode Gallium-Nitride(GaN) FET
Not Recommended for New Designs
GNP1070TC-Z
EcoGaN™, 650V 20A DFN8080K, E-mode Gallium-Nitride(GaN) FET
This product cannot be used for new designs (Not recommended for design diversion).
Product Detail
Specifications:
VDS [V]
650
IDS [A]
20
VGS Rating [V]
6
RDS(on) [mΩ]
70
Qg [nC]
5.2
Dimensions [mm]
8.0x8.0 (t=0.9)
Features:
- 650V E-mode GaN FET
- 70mΩ Resistance
- 5.2nC Gate Charge
Supporting Information
Overview
This product deliver industry-leading performance in terms of RDS(ON) × Ciss / RDS(ON) × Coss, a figure of merit for GaN HEMTs, translating to higher efficiency in power supply systems. At the same time, a built-in ESD protection element improves electrostatic breakdown resistance up to 3.5kV, leading to higher application reliability. GaN HEMTs’ high-speed switching characteristics also contribute to greater miniaturization of peripheral components.
Application Examples
Ideal for a broad range of power supply systems in industrial equipment and consumer devices, including servers and AC adapters
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